2SK3934
15 A, 500 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Avalanche Energy Rating (Eas)1080 mJ
Case ConnectionISOLATED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)15 A
Drain-source On Resistance-Max0.3000 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionLEAD FREE, 2-10U1B, SC-67, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)60 A
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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