2SK4034
75 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET

From Toshiba America Electronic Components, Inc.

StatusACTIVE
Avalanche Energy Rating (Eas)322 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)75 A
Drain-source On Resistance-Max0.0100 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionROHS COMPLIANT, 2-9F1B, SC-97, 4 PIN
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)300 A
Surface MountYes
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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