TK65A10N1,S4X MOSFET MOSFET NCh 4ohm VGS10V10uAVDS100V
From Toshiba
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Id - Continuous Drain Current | 65 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Pd - Power Dissipation | 45 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 81 nC |
| Rds On - Drain-Source Resistance | 4 mOhms |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2 V to 4 V |
