TK65E10N1,S1X MOSFET 100V N-Ch PWR FET 148A 192W 5400pF
From Toshiba
| Brand | Toshiba |
| Factory Pack Quantity | 50 |
| Fall Time | 26 ns |
| Id - Continuous Drain Current | 148 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 192 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 81 nC |
| Rds On - Drain-Source Resistance | 4 mOhms |
| Rise Time | 19 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 85 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
