TK65G10N1,RQ MOSFET UMOSVIII 100V 4.5m max(VGS=10V) D2PAK
From Toshiba
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Fall Time | 26 ns |
| Id - Continuous Drain Current | 136 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | SMD/SMT |
| Package / Case | D2PAK-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 156 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 81 nC |
| Rds On - Drain-Source Resistance | 3.8 mOhms |
| Rise Time | 19 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 85 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Breakdown Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
