TK6A60D(STA4,Q,M) MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm
From Toshiba
| Brand | Toshiba |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 50 |
| Fall Time | 12 ns |
| Id - Continuous Drain Current | 6 A |
| Manufacturer | Toshiba |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 40 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 16 nC |
| Rds On - Drain-Source Resistance | 1.25 Ohms |
| Rise Time | 20 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 60 ns |
| Vds - Drain-Source Breakdown Voltage | 600 V |
| Vgs - Gate-Source Breakdown Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
