TPM2323-60 S BAND, GaAs, N-CHANNEL, RF POWER, MOSFET
From Toshiba America Electronic Components, Inc.
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 15 V |
| Drain Current-Max (ID) | 26 A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Highest Frequency Band | S BAND |
| Mfr Package Description | HERMETIC SEALED, 2-16G1B, 2 PIN |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Operating Mode | DEPLETION |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Surface Mount | Yes |
| Terminal Finish | NOT SPECIFIED |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF POWER |
