TTA1943(Q) Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V
From Toshiba
Brand | Toshiba |
Collector- Base Voltage VCBO | - 230 V |
Collector- Emitter Voltage VCEO Max | - 230 V |
Collector-Emitter Saturation Voltage | - 3 V |
Configuration | Single |
DC Collector/Base Gain hfe Min | 80 |
DC Current Gain hFE Max | 160 |
Emitter- Base Voltage VEBO | - 5 V |
Factory Pack Quantity | 100 |
Gain Bandwidth Product fT | 30 MHz |
Manufacturer | Toshiba |
Maximum DC Collector Current | - 15 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 55 C |
Mounting Style | Through Hole |
Package / Case | TO-3PL |
Packaging | Bulk |
Pd - Power Dissipation | 150 W |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Transistor Polarity | PNP |