TTA1943(Q)
Bipolar Transistors - BJT PNP 150W -15A 80 HFE -3V -230V

From Toshiba

BrandToshiba
Collector- Base Voltage VCBO- 230 V
Collector- Emitter Voltage VCEO Max- 230 V
Collector-Emitter Saturation Voltage- 3 V
ConfigurationSingle
DC Collector/Base Gain hfe Min80
DC Current Gain hFE Max160
Emitter- Base Voltage VEBO- 5 V
Factory Pack Quantity100
Gain Bandwidth Product fT30 MHz
ManufacturerToshiba
Maximum DC Collector Current- 15 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Mounting StyleThrough Hole
Package / CaseTO-3PL
PackagingBulk
Pd - Power Dissipation150 W
Product CategoryBipolar Transistors - BJT
RoHSDetails
Transistor PolarityPNP

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