2N2160 PN (N-Type Base) Unijunction Transistor
From Various
| Absolute Max. Power Diss. (W) | 450m |
| I(E) Max. (A) | 70m |
| I(P) Max. (A) | 25u |
| I(V) Min. (A) | 8.0m |
| Intrinsic Standoff Ratio (Max) | 0.80 |
| Intrinsic Standoff Ratio (Min) | 0.47 |
| Military | N |
| Package | TO-5 |
| V(B2B1) Max. (V) | 35 |
| r(BBO) Max. (ê) | 12k |
| r(BBO) Min. (ê) | 4.0k |
