BF966 N-Channel, Dual-Gate Tetrode MOSFET
From Various
@I(D) (A) (Test Condition) | 10m |
@V(DS) (V) (Test Condition) | 15 |
Absolute Max. Power Diss. (W) | 225m |
C(iss) Max. (F) | 2.6p |
I(D) Abs. Drain Current (A) | 30m |
I(DSS) Min. (A) | 20m |
I(GSS) Max. (A) | 50n |
Package | SOT-103 |
V(BR)DSS (V) | 20 |
g(fs) Max, (S) Trans. conduct, | 17m |
g(fs) Min. (S) Trans. conduct. | 15m |