BF966
N-Channel, Dual-Gate Tetrode MOSFET

From Various

@I(D) (A) (Test Condition)10m
@V(DS) (V) (Test Condition)15
Absolute Max. Power Diss. (W)225m
C(iss) Max. (F)2.6p
I(D) Abs. Drain Current (A)30m
I(DSS) Min. (A)20m
I(GSS) Max. (A)50n
PackageSOT-103
V(BR)DSS (V)20
g(fs) Max, (S) Trans. conduct,17m
g(fs) Min. (S) Trans. conduct.15m

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