BUZ30
P-Channel Enhancement MOSFET

From Various

StatusDiscontinued
@(VDS) (V) (Test Condition)200
@I(D) (A) (Test Condition)2.7
@V(DS) (V) (Test Condition)25
Absolute Max. Power Diss. (W)44
C(iss) Max. (F)1.5n
I(D) Abs. Drain Current (A)5.5
I(DSS) Min. (A)1.0m
I(GSS) Max. (A)100n
MilitaryN
PackageTO-220
V(BR)DSS (V)200
V(BR)GSS (V)200
g(fs) Min. (S) Trans. conduct.5.0
r(DS)on Max. (Ohms)750m

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