BUZ309 N-Channel Enhancement MOSFET
From Various
| @I(D) (A) (Test Condition) | 1.6 |
| @V(DS) (V) (Test Condition) | 25 |
| Absolute Max. Power Diss. (W) | 75 |
| C(iss) Max. (F) | 2.1n |
| I(D) Abs. Drain Current (A) | 2.8 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-218 |
| V(BR)DSS (V) | 1.0k |
| g(fs) Max, (S) Trans. conduct, | 1.5 |
| g(fs) Min. (S) Trans. conduct. | 700m |
| r(DS)on Max. (Ohms) | 4.0 |
| t(f) Max. (s) Fall time. | 80n |
| t(r) Max. (s) Rise time | 60n |
