IRF541R
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)20
@Freq. (Hz) (Test Condition)1M
@I(D) (A) (Test Condition)17
@Temp (°C) (Test Condition)25
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)10
Absolute Max. Power Diss. (W)150
C(iss) Max. (F)1.45n
I(D) Abs. Drain Current (A)28
I(D) Abs. Max.(A) Drain Curr.20
I(DM) Max (A)(@25°C)110
I(DSS) Max. (A)250u
I(GSS) Max. (A)500n
MilitaryN
PackageTO-220AB
Thermal Resistance Junc-Amb.80
V(BR)DSS (V)80
V(BR)GSS (V)20
V(GS)th Max. (V)4
V(GS)th Min. (V)2
g(fs) Max, (S) Trans. conduct,13
g(fs) Min. (S) Trans. conduct.8.7
r(DS)on Max. (Ohms)77m
t(d)off Max. (s) Off time60n
t(f) Max. (s) Fall time.75n
t(r) Max. (s) Rise time110n
td(on) Max (s) On time delay23n

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