IRF620CF
N-Channel Enhancement MOSFET

From Various

@V(DS) (V) (Test Condition)10
C(iss) Max. (F)600p
I(D) Abs. Drain Current (A)5.6
I(DSS) Min. (A)250u
I(GSS) Max. (A)50n
MilitaryN
PackageTO-220AB
V(BR)DSS (V)200
g(fs) Min. (S) Trans. conduct.1.3
r(DS)on Max. (Ohms)640m
t(f) Max. (s) Fall time.60n
t(r) Max. (s) Rise time60n

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