IRF630CF
N-Channel Enhancement MOSFET

From Various

@V(DS) (V) (Test Condition)10
C(iss) Max. (F)800p
I(D) Abs. Drain Current (A)10
I(DSS) Min. (A)250u
I(GSS) Max. (A)500n
MilitaryN
PackageTO-220AB
V(BR)DSS (V)200
g(fs) Min. (S) Trans. conduct.3.0
r(DS)on Max. (Ohms)320m
t(f) Max. (s) Fall time.40n
t(r) Max. (s) Rise time50n

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