IRF820CF N-Channel Enhancement MOSFET
From Various
| @V(DS) (V) (Test Condition) | 10 |
| C(iss) Max. (F) | 400p |
| I(D) Abs. Drain Current (A) | 2.8 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 500n |
| Military | N |
| Package | TO-220AB |
| V(BR)DSS (V) | 500 |
| g(fs) Min. (S) Trans. conduct. | 1.0 |
| r(DS)on Max. (Ohms) | 2.4 |
| t(f) Max. (s) Fall time. | 30n |
| t(r) Max. (s) Rise time | 50n |
