THBC307B
Si PNP Lo-Pwr BJT

From Various

@I(C) (A) (Test Condition)2.0m
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)250m
C(obo) (Max) (F)6.0p
I(C) Abs.(A) Collector Current100m
I(CBO) Max. (A)15n
MilitaryN
PackageChip
V(BR)CBO (V)50
V(BR)CEO (V)45
f(T) Min. (Hz) Transition Freq150M
h(FE) Min. Static Current Gain200

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