2N6963 N-Channel Enhancement MOSFET
From Various
@(VDS) (V) (Test Condition) | 30 |
@I(D) (A) (Test Condition) | 19 |
@V(DS) (V) (Test Condition) | 15 |
Absolute Max. Power Diss. (W) | 150 |
C(iss) Max. (F) | 3.2n |
I(D) Abs. Drain Current (A) | 30 |
I(DSS) Min. (A) | 250u |
I(GSS) Max. (A) | 100n |
Military | N |
Package | TO-210AC |
V(BR)DSS (V) | 200 |
V(BR)GSS (V) | 30 |
g(fs) Max, (S) Trans. conduct, | 15.5 |
g(fs) Min. (S) Trans. conduct. | 9.0 |
r(DS)on Max. (Ohms) | 90m |
t(f) Max. (s) Fall time. | 100n |
t(r) Max. (s) Rise time | 130n |