2N6963
N-Channel Enhancement MOSFET

From Various

@(VDS) (V) (Test Condition)30
@I(D) (A) (Test Condition)19
@V(DS) (V) (Test Condition)15
Absolute Max. Power Diss. (W)150
C(iss) Max. (F)3.2n
I(D) Abs. Drain Current (A)30
I(DSS) Min. (A)250u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-210AC
V(BR)DSS (V)200
V(BR)GSS (V)30
g(fs) Max, (S) Trans. conduct,15.5
g(fs) Min. (S) Trans. conduct.9.0
r(DS)on Max. (Ohms)90m
t(f) Max. (s) Fall time.100n
t(r) Max. (s) Rise time130n

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