THBC327-16 Si PNP Lo-Pwr BJT
From Various
@I(C) (A) (Test Condition) | 100m |
@V(CE) (V) (Test Condition) | 1.0 |
Absolute Max. Power Diss. (W) | 600m |
C(obo) (Max) (F) | 12p |
I(C) Abs.(A) Collector Current | 800m |
Military | N |
Package | Chip |
V(BR)CBO (V) | 50 |
V(BR)CEO (V) | 45 |
f(T) Min. (Hz) Transition Freq | 100M |
h(FE) Min. Static Current Gain | 250 |