THBC327-16 Si PNP Lo-Pwr BJT
From Various
| @I(C) (A) (Test Condition) | 100m |
| @V(CE) (V) (Test Condition) | 1.0 |
| Absolute Max. Power Diss. (W) | 600m |
| C(obo) (Max) (F) | 12p |
| I(C) Abs.(A) Collector Current | 800m |
| Military | N |
| Package | Chip |
| V(BR)CBO (V) | 50 |
| V(BR)CEO (V) | 45 |
| f(T) Min. (Hz) Transition Freq | 100M |
| h(FE) Min. Static Current Gain | 250 |
