2N7000/E7
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

From Vishay Intertechnology, Inc.

StatusDISCONTINUED
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.3000 A
Drain-source On Resistance-Max5 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionPLASTIC, TO-92, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeROUND
Package StyleCYLINDRICAL
Power Dissipation Ambient-Max0.8300 W
Terminal FinishMATTE TIN
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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