2N7000-TR1
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

From Vishay Intertechnology, Inc.

Status DISCONTINUED
Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.3000 A
Drain-source On Resistance-Max 5 ohm
DS Breakdown Voltage-Min 60 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Mfr Package Description PLASTIC, TO-92, 3 PIN
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Power Dissipation Ambient-Max 0.8300 W
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE SMALL SIGNAL

External links