2N7000-TR1
300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA

From Vishay Intertechnology, Inc.

Status DISCONTINUED
Channel Type N-CHANNEL
Configuration SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 0.3000 A
Drain-source On Resistance-Max 5 ohm
DS Breakdown Voltage-Min 60 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Mfr Package Description PLASTIC, TO-92, 3 PIN
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Power Dissipation Ambient-Max 0.8300 W
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Transistor Type GENERAL PURPOSE SMALL SIGNAL

External links

There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.