IRC640-009PBF
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET

From Vishay Presicion Group

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN CURRENT AND KELVIN SENSOR
DS Breakdown Voltage-Min200 V
Drain Current-Max (ID)18 A
Drain-source On Resistance-Max0.1800 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-220, 5 PIN
Number of Elements1
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Terminal FinishTIN COPPER
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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