IRF830ASTRR
5 A, 500 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET

From Vishay Presicion Group

StatusACTIVE
Avalanche Energy Rating (Eas)230 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)5 A
Drain-source On Resistance-Max1.4 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionD2PAK-3
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max3.1 W
Pulsed Drain Current-Max (IDM)20 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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