IRFBE20L MOSFET N-CH 800V 1.8A TO-262
From Vishay Siliconix
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Datasheets | IRFBE20 |
Drain to Source Voltage (Vdss) | 800V |
FET Feature | Standard |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) @ Vds | 530pF @ 25V |
Mounting Type | Through Hole |
Other Names | *IRFBE20L |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Packaging | Tube |
Power - Max | 54W |
Rds On (Max) @ Id, Vgs | 6.5 Ohm @ 1.1A, 10V |
Series | - |
Standard Package | 50 |
Supplier Device Package | I2PAK |
Vgs(th) (Max) @ Id | 4V @ 250µA |