IRFBE20L
MOSFET N-CH 800V 1.8A TO-262

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C1.8A (Tc)
DatasheetsIRFBE20
Drain to Source Voltage (Vdss)800V
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs38nC @ 10V
Input Capacitance (Ciss) @ Vds530pF @ 25V
Mounting TypeThrough Hole
Other Names*IRFBE20L
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
PackagingTube
Power - Max54W
Rds On (Max) @ Id, Vgs6.5 Ohm @ 1.1A, 10V
Series-
Standard Package50
Supplier Device PackageI2PAK
Vgs(th) (Max) @ Id4V @ 250µA

External links