IRFBG30-006
3.1 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

From Vishay Presicion Group

StatusACTIVE
Avalanche Energy Rating (Eas)280 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min1000 V
Drain Current-Max (ID)3.1 A
Drain-source On Resistance-Max5 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)12 A
Terminal FinishNOT SPECIFIED
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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