IRFBG30
MOSFET N-CH 1000V 3.1A TO-220AB

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C3.1A (Tc)
DatasheetsIRFBG30 Packaging Information
Drain to Source Voltage (Vdss)1000V (1kV)
FET FeatureStandard
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs80nC @ 10V
Input Capacitance (Ciss) @ Vds980pF @ 25V
Mounting TypeThrough Hole
Other Names*IRFBG30
PCN Obsolescence/ EOLSIL-018-2015-Rev-0 20/May/2015
Package / CaseTO-220-3
PackagingTube
Power - Max125W
Product PhotosTO-220AB
Rds On (Max) @ Id, Vgs5 Ohm @ 1.9A, 10V
Series-
Standard Package1,000
Supplier Device PackageTO-220AB
Vgs(th) (Max) @ Id4V @ 250µA

External links