IRLD110PBF MOSFET N-CH 100V 1A 4-DIP
From Vishay Siliconix
Catalog Drawings | IR(F,L)D Series Side 1 IR(F,L)D Series Side 2 |
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Datasheets | IRLD110 |
Drain to Source Voltage (Vdss) | 100V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 6.1nC @ 5V |
Input Capacitance (Ciss) @ Vds | 250pF @ 25V |
Mounting Type | Through Hole |
Online Catalog | N-Channel Logic Level Gate FETs |
Other Names | *IRLD110PBF |
Package / Case | 4-DIP (0.300", 7.62mm) |
Packaging | Tube |
Power - Max | 1.3W |
Product Photos | 4-DIP |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 5V |
Series | - |
Standard Package | 100 |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Vgs(th) (Max) @ Id | 2V @ 250µA |