NSB8MT-E3/45 DIODE GEN PURP 1KV 8A TO263AB
From Vishay Semiconductor Diodes Division
Capacitance @ Vr, F | 55pF @ 4V, 1MHz |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 8A |
Current - Reverse Leakage @ Vr | 10µA @ 1000V |
Datasheets | NS(F,B)8AT thru NS(F,B)8MT Packaging Information |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Surface Mount |
Operating Temperature - Junction | -55°C ~ 150°C |
PCN Assembly/Origin | DD-010-2015-Rev-0 10/Mar/2015 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Packaging | Tube |
Product Photos | TO-263 |
Reverse Recovery Time (trr) | - |
Series | - |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Standard Package | 50 |
Supplier Device Package | TO-263AB |
Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 8A |