P600M-E3/73 DIODE GEN PURP 1KV 6A P600
From Vishay Semiconductor Diodes Division
| Capacitance @ Vr, F | 150pF @ 4V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 6A |
| Current - Reverse Leakage @ Vr | 5µA @ 1000V |
| Datasheets | P600A thru P600M |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -50°C ~ 150°C |
| PCN Assembly/Origin | DD-009-2014-Rev-0 16/May/2014 |
| Package / Case | P600, Axial |
| Packaging | Tape & Box (TB) |
| Product Photos | P600, Axial |
| Reverse Recovery Time (trr) | 2.5µs |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Standard Package | 300 |
| Supplier Device Package | P600 |
| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 6A |
