SI4160DY-T1-GE3 MOSFET N-CH 30V 25.4A 8-SOIC
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 25.4A (Tc) |
| Datasheets | SI4160DY |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 54nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2071pF @ 15V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | SI4160DY-T1-GE3DKR |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Digi-Reel® |
| Power - Max | 5.7W |
| Product Photos | 8-SOIC |
| Rds On (Max) @ Id, Vgs | 4.9 mOhm @ 15A, 10V |
| Series | TrenchFET® |
| Standard Package | 1 |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
