SI4778DY-T1-E3 MOSFET N-CH 25V 8A 8-SOIC
From Vishay Siliconix
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Datasheets | SI4778DY |
Drain to Source Voltage (Vdss) | 25V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 18nC @ 10V |
Input Capacitance (Ciss) @ Vds | 680pF @ 13V |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Packaging | Tape & Reel (TR) |
Power - Max | 5W |
Product Photos | 8-SOIC |
Rds On (Max) @ Id, Vgs | 23 mOhm @ 7A, 10V |
Series | TrenchFET® |
Standard Package | 2,500 |
Supplier Device Package | 8-SO |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |