SI4778DY-T1-E3
MOSFET N-CH 25V 8A 8-SOIC

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C8A (Tc)
DatasheetsSI4778DY
Drain to Source Voltage (Vdss)25V
FET FeatureLogic Level Gate
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs18nC @ 10V
Input Capacitance (Ciss) @ Vds680pF @ 13V
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingTape & Reel (TR)
Power - Max5W
Product Photos8-SOIC
Rds On (Max) @ Id, Vgs23 mOhm @ 7A, 10V
SeriesTrenchFET®
Standard Package2,500
Supplier Device Package8-SO
Vgs(th) (Max) @ Id2.2V @ 250µA

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