SI4800BDY-T1-E3 MOSFET N-CH 30V 6.5A 8-SOIC
From Vishay Siliconix
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
Datasheets | Si4800BDY |
Drain to Source Voltage (Vdss) | 30V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 13nC @ 5V |
Input Capacitance (Ciss) @ Vds | - |
Mounting Type | Surface Mount |
Online Catalog | N-Channel Logic Level Gate FETs |
Other Names | SI4800BDY-T1-E3DKR |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Packaging | Digi-Reel® |
Power - Max | 1.3W |
Product Photos | 8-SOIC |
Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 9A, 10V |
Series | TrenchFET® |
Standard Package | 1 |
Supplier Device Package | 8-SO |
Vgs(th) (Max) @ Id | 1.8V @ 250µA |