SI4800BDY-T1-GE3 MOSFET N-CH 30V 6.5A 8-SOIC
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Datasheets | Si4800BDY |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 13nC @ 5V |
| Input Capacitance (Ciss) @ Vds | - |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | SI4800BDY-T1-GE3DKR |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Digi-Reel® |
| Power - Max | 1.3W |
| Product Photos | 8-SOIC |
| Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 9A, 10V |
| Series | TrenchFET® |
| Standard Package | 1 |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
