SI4816BDY-T1-E3
MOSFET 2N-CH 30V 5.8A 8-SOIC

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C5.8A, 8.2A
DatasheetsSi4816BDY
Drain to Source Voltage (Vdss)30V
FET FeatureLogic Level Gate
FET Type2 N-Channel (Half Bridge)
FamilyFETs - Arrays
Gate Charge (Qg) @ Vgs10nC @ 5V
Input Capacitance (Ciss) @ Vds-
Mounting TypeSurface Mount
Online CatalogN-Channel Logic Level Gate FETs
Other NamesSI4816BDY-T1-E3CT
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingCut Tape (CT)
Power - Max1W, 1.25W
Product Photos8-SOIC
Rds On (Max) @ Id, Vgs18.5 mOhm @ 6.8A, 10V
SeriesLITTLE FOOT®
Standard Package1
Supplier Device Package8-SO
Vgs(th) (Max) @ Id3V @ 250µA

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