SI4858DY-T1-E3
MOSFET N-CH 30V 13A 8-SOIC

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C13A (Ta)
DatasheetsSI4858DY
Drain to Source Voltage (Vdss)30V
FET FeatureLogic Level Gate
FET TypeMOSFET N-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs40nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Mounting TypeSurface Mount
PCN Assembly/OriginMultiple Fabracation Changes09/Jul/2014
PCN Obsolescence/ EOLSIL-0632014 16/Apr/2014
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingTape & Reel (TR)
Power - Max1.6W
Product Photos8-SOIC
Rds On (Max) @ Id, Vgs5.25 mOhm @ 20A, 10V
SeriesTrenchFET®
Standard Package2,500
Supplier Device Package8-SO
Vgs(th) (Max) @ Id1V @ 250µA (Min)

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