SI4888DY-T1-E3 MOSFET N-CH 30V 11A 8-SOIC
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Datasheets | SI4888DY |
| Drain to Source Voltage (Vdss) | 30V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 24nC @ 5V |
| Input Capacitance (Ciss) @ Vds | - |
| Mounting Type | Surface Mount |
| Other Names | SI4888DY-T1-E3CT |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| PCN Obsolescence/ EOL | SIL-0632014 16/Apr/2014 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Packaging | Cut Tape (CT) |
| Power - Max | 1.6W |
| Product Photos | 8-SOIC |
| Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 10V |
| Series | TrenchFET® |
| Standard Package | 1 |
| Supplier Device Package | 8-SO |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
