SI4888DY-T1-GE3 MOSFET N-CH 30V 11A 8-SOIC
From Vishay Siliconix
Category | Discrete Semiconductor Products |
Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
Datasheets | SI4888DY |
Drain to Source Voltage (Vdss) | 30V |
FET Feature | Logic Level Gate |
FET Type | MOSFET N-Channel, Metal Oxide |
Family | FETs - Single |
Gate Charge (Qg) @ Vgs | 24nC @ 5V |
Input Capacitance (Ciss) @ Vds | - |
Mounting Type | Surface Mount |
PCN Obsolescence/ EOL | SIL-0632014 16/Apr/2014 |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Packaging | Tape & Reel (TR) |
Power - Max | 1.6W |
Product Photos | 8-SOIC |
Rds On (Max) @ Id, Vgs | 7 mOhm @ 16A, 10V |
Series | TrenchFET® |
Standard Package | 2,500 |
Supplier Device Package | 8-SO |
Vgs(th) (Max) @ Id | 1.6V @ 250µA |