SI4888DY-T1 11000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From Vishay Presicion Group
Status | ACTIVE |
Channel Type | N-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 11 A |
Drain-source On Resistance-Max | 0.0070 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | SO-8 |
Number of Elements | 1 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Surface Mount | Yes |
Terminal Finish | TIN LEAD |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |