SI7106DN-T1-E3 MOSFET N-CH 20V 12.5A 1212-8
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Datasheets | Si7106DN |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate, 2.5V Drive |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 27nC @ 4.5V |
| Input Capacitance (Ciss) @ Vds | - |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | SI7106DN-T1-E3TR SI7106DNT1E3 |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| Package / Case | PowerPAK® 1212-8 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 1.5W |
| Product Photos | PowerPAK 1212-8 |
| Rds On (Max) @ Id, Vgs | 6.2 mOhm @ 19.5A, 4.5V |
| Series | TrenchFET® |
| Standard Package | 3,000 |
| Supplier Device Package | PowerPAK® 1212-8 |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
