SI8409DB-T1-E1
MOSFET P-CH 30V 4.6A 2X2 4-MFP

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C4.6A (Ta)
DatasheetsSI8409DB
Drain to Source Voltage (Vdss)30V
FET FeatureLogic Level Gate, 2.5V Drive
FET TypeMOSFET P-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs26nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Mounting TypeSurface Mount
Online CatalogP-Channel Logic Level Gate FETs
Other NamesSI8409DB-T1-E1TR SI8409DBT1E1
Package / Case4-XFBGA, CSPBGA
PackagingTape & Reel (TR)
Power - Max1.47W
Product Photos4-Micro Foot
Rds On (Max) @ Id, Vgs46 mOhm @ 1A, 4.5V
SeriesTrenchFET®
Standard Package3,000
Supplier Device Package4-Microfoot
Vgs(th) (Max) @ Id1.4V @ 250µA

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