SI8900EDBT1
2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From Vishay Presicion Group

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationCOMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Drain-source On Resistance-Max0.0400 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description2 X 5 MM, MICRO FOOT, CSP-10
Number of Elements2
Number of Terminals10
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Surface MountYes
Terminal FormBALL
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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