SIHB6N65E-GE3 MOSFET N-CH 650V 7A D2PAK
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Datasheets | SIHB6N65E-GE3 |
| Drain to Source Voltage (Vdss) | 650V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 48nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 820pF @ 100V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | SIHB6N65E-GE3-ND SIHB6N65E-GE3TR |
| PCN Assembly/Origin | SIL-079-2014-Rev-0 26/Sep/2014 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Packaging | Tape & Reel (TR) |
| Power - Max | 78W |
| Product Photos | TO-263 |
| Product Training Modules | High Voltage MOSFET E Series and PFC Device Selection |
| Rds On (Max) @ Id, Vgs | 600 mOhm @ 3A, 10V |
| Series | - |
| Standard Package | 1,000 |
| Supplier Device Package | D²PAK (TO-263) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
