SIR662DP-T1-GE3 MOSFET N-CH 60V 60A PPAK SO-8
From Vishay Siliconix
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Datasheets | SIR662DP |
| Drain to Source Voltage (Vdss) | 60V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 96nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4365pF @ 30V |
| Mounting Type | Surface Mount |
| Other Names | SIR662DP SIR662DP-T1-GE3TR SIR662DPT1GE3 SIR662DPTR SIR662DPTR-ND |
| PCN Assembly/Origin | Multiple Fabracation Changes09/Jul/2014 |
| Package / Case | PowerPAK® SO-8 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 104W |
| Product Photos | PowerPAK SO-8 Pkg |
| Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 20A, 10V |
| Series | TrenchFET® |
| Standard Package | 3,000 |
| Supplier Device Package | PowerPAK® SO-8 |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
