SUU06N10-225L-E3
6.5 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

From Vishay Presicion Group

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)6.5 A
Drain-source On Resistance-Max0.2000 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionTO-251, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleIN-LINE
Pulsed Drain Current-Max (IDM)8 A
Terminal FinishMATTE TIN OVER NICKEL
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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