US1G-E3/5AT DIODE GEN PURP 400V 1A DO214AC
From Vishay Semiconductor Diodes Division
Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 1A |
Current - Reverse Leakage @ Vr | 10µA @ 400V |
Datasheets | US1A-1M Packaging Information |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Surface Mount |
Online Catalog | Standard Diode |
Operating Temperature - Junction | -55°C ~ 150°C |
Other Names | US1G-E3/5AT-ND US1GE35AT |
Package / Case | DO-214AC, SMA |
Packaging | Tape & Reel (TR) |
Product Photos | DO-214AC,SMA |
Reverse Recovery Time (trr) | 50ns |
Series | - |
Speed | Fast Recovery = 200mA (Io) |
Standard Package | 7,500 |
Supplier Device Package | DO-214AC (SMA) |
Voltage - DC Reverse (Vr) (Max) | 400V |
Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |