US1M-E3/5AT DIODE GEN PURP 1KV 1A DO214AC
From Vishay Semiconductor Diodes Division
| Capacitance @ Vr, F | 10pF @ 4V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 1A |
| Current - Reverse Leakage @ Vr | 10µA @ 1000V |
| Datasheets | US1A-1M Packaging Information |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Online Catalog | Standard Diode |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Other Names | US1M-E3/5AT-ND US1M-E3/5ATGITR US1ME35AT |
| Package / Case | DO-214AC, SMA |
| Packaging | Tape & Reel (TR) |
| Product Photos | DO-214AC,SMA |
| Reverse Recovery Time (trr) | 75ns |
| Series | - |
| Speed | Fast Recovery = 200mA (Io) |
| Standard Package | 7,500 |
| Supplier Device Package | DO-214AC (SMA) |
| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 1A |
