IRF610-007 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From Vishay Presicion Group
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 3.3 A |
Drain-source On Resistance-Max | 1.5 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Terminal Finish | NOT SPECIFIED |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |