S1GHE3/5AT DIODE GEN PURP 400V 1A DO214AC
From Vishay Semiconductor Diodes Division
Capacitance @ Vr, F | 12pF @ 4V, 1MHz |
Category | Discrete Semiconductor Products |
Current - Average Rectified (Io) | 1A |
Current - Reverse Leakage @ Vr | 1µA @ 400V |
Datasheets | Packaging Information S1A/B/D/G/J/K/M |
Diode Type | Standard |
Family | Diodes, Rectifiers - Single |
Mounting Type | Surface Mount |
Operating Temperature - Junction | -55°C ~ 150°C |
Other Names | S1GHE3/5AT-ND S1GHE35AT |
PCN Obsolescence/ EOL | PCN-DD-025-2012-Rev-0 28/Nov/2012 |
Package / Case | DO-214AC, SMA |
Packaging | Tape & Reel (TR) |
Product Photos | DO-214AC,SMA |
Reverse Recovery Time (trr) | 1.8µs |
Series | - |
Speed | Standard Recovery >500ns, > 200mA (Io) |
Standard Package | 7,500 |
Supplier Device Package | DO-214AC (SMA) |
Voltage - DC Reverse (Vr) (Max) | 400V |
Voltage - Forward (Vf) (Max) @ If | 1.1V @ 1A |