IRF830SPBF
MOSFET, Power; N-Ch; VDSS 500V; RDS(ON) 1.5 Ohms; ID 4.5A; SMD-220; PD 74W; VGS +/-20V

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions10.67 x 9.65 x 4.83 mm
Forward Diode Voltage1.6 V
Forward Transconductance2.5 S
Height4.83 mm
Length10.67 mm
Maximum Continuous Drain Current4.5 A
Maximum Drain Source Resistance1.5 Ω
Maximum Drain Source Voltage500 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation74 W
Minimum Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeD2PAK
Pin Count3
Typical Gate Charge @ VgsMaximum of 38 nC @ 10 V
Typical Input Capacitance @ Vds610 pF @ 25 V
Typical Turn On Delay Time8.2 ns
Typical TurnOff Delay Time42 ns
Width9.65 mm

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