IRFR110PBF
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.54Ohm; ID 4.3A; TO-252AA; PD 25W; VGS +/-20V

From Vishay PCS

CategoryPower MOSFET
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Dimensions6.73 x 6.22 x 2.38 mm
Forward Diode Voltage2.5 V
Forward Transconductance1.6 S
Height2.38 mm
Length6.73 mm
Maximum Continuous Drain Current4.3 A
Maximum Drain Source Resistance0.54 Ω
Maximum Drain Source Voltage100 V
Maximum Gate Source Voltage±20 V
Maximum Operating Temperature+150 °C
Maximum Power Dissipation25 W
Minimum Operating Temperature-55 °C
Mounting TypeSurface Mount
Number of Elements per Chip1
Operating Temperature Range-55 to +150 °C
Package TypeDPAK
Pin Count3
Typical Gate Charge @ VgsMaximum of 8.3 nC @ 10 V
Typical Input Capacitance @ Vds180 pF @ 25 V
Typical Turn On Delay Time6.9 ns
Typical TurnOff Delay Time15 ns
Width6.22 mm

External links